Xi'an Zhiyue Material Tech. Co., Ltd.
Xi'an Zhiyue Material Tech. Co., Ltd.

Atomic Layer Deposition (ALD) is a thin-film deposition technique used in nanofabrication. It involves the sequential introduction of gaseous precursors into a reaction chamber, where they react on a substrate surface to form a conformal, uniform coating. ALD is known for its precise control over film thickness and composition, enabling the creation of ultra-thin layers with atomic-level precision. It's widely used in various industries, including electronics, optics, and energy storage, for applications like semiconductor manufacturing and solar cell production. To achieve optimal results, partnering with a reputable ALD precursor manufacturer is crucial for obtaining high-quality precursors tailored to specific application needs.

ALD Precursor Types

Advantages of ALD Precursor

  • Q

    Exceptional Film Conformality in High-Aspect Ratio Structures

    A

    One of the primary advantages of ALD precursors lies in their ability to deposit ultra-conformal films on complex 3D structures. In advanced semiconductor nodes, MEMS, and high-aspect-ratio trenches or vias, traditional CVD or PVD methods struggle with step coverage. ALD precursors, due to their self-limiting surface reactions, ensure uniform and pinhole-free coatings — even on deep features with aspect ratios greater than 100:1. This is critical for applications like gate dielectrics, DRAM capacitors, and 3D NAND flash.

  • Q

    Atomic-Scale Thickness Control for Precision Engineering

    A

    ALD technology, powered by highly engineered precursors, allows precise, monolayer-level control over film thickness. This atomic precision is essential in industries where device performance depends heavily on thickness uniformity and repeatability, such as logic transistors, optical coatings, and quantum devices. The ability to finely tune the number of cycles enables reproducible thickness control at the atomic scale — an unmatched benefit over conventional techniques.

  • Q

    Superior Material Quality and Interface Purity

    A

    High-purity ALD precursors contribute directly to low-defect density, smooth surface morphology, and excellent interface quality. This is particularly important for producing high-k dielectrics, barrier layers, and gate oxides where impurities can lead to dielectric breakdown or mobility degradation. Well-designed ALD precursors facilitate lower thermal budgets, minimal carbon/halide contamination, and better crystallinity control.


  • Q

    Wide Material Portfolio for Diverse Applications

    A

    Modern ALD precursors support the deposition of a wide range of materials including oxides (e.g., Al₂O₃, HfO₂), nitrides (e.g., TiN, TaN), metals (e.g., Ru, Pt), and sulfides. This versatility has enabled ALD to be used not only in semiconductor manufacturing but also in battery materials, catalysis, photovoltaics, and medical device coatings. The chemical tunability of precursors allows researchers and engineers to customize properties such as refractive index, conductivity, or barrier performance.


  • Q

    Scalability and Compatibility with Industrial Platforms

    A

    ALD precursors are well-suited for integration with high-volume manufacturing (HVM) platforms, including batch and spatial ALD tools. Many precursors are available in high-purity, high-throughput delivery systems, with controlled volatility, low decomposition temperature, and robust storage life. This ensures operational reliability and minimal downtime in industrial-scale production environments.


  • Q

    Enabling Low-Temperature and Flexible Substrate Deposition

    A

    Certain ALD precursors allow deposition at temperatures below 100°C, enabling compatibility with temperature-sensitive substrates such as polymers, glasses, and flexible electronics. This opens doors to applications in OLEDs, flexible displays, barrier films, and wearable electronics — where traditional vacuum-based methods are often impractical or damaging.

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