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Xi'an Zhiyue Material Tech. Co., Ltd.
Xi'an Zhiyue Material Tech. Co., Ltd.

Atomic Layer Deposition (ALD) is a thin-film deposition technique used in nanofabrication. It involves the sequential introduction of gaseous precursors into a reaction chamber, where they react on a substrate surface to form a conformal, uniform coating. ALD is known for its precise control over film thickness and composition, enabling the creation of ultra-thin layers with atomic-level precision. It's widely used in various industries, including electronics, optics, and energy storage, for applications like semiconductor manufacturing and solar cell production.

ALD Precursor Types

Hafnium (HF) Hafnium (HF) View More
Tetrakis(diethylamino)hafnium (IV) Tetrakis(diethylamino)hafnium (IV) View More
Platinum (Pt) Platinum (Pt) View More
Tantalum (Ta) Tantalum (Ta) View More
Indium (In) Indium (In) View More
Ytterbium (Yb) Ytterbium (Yb) View More
Yttrium (Y) Yttrium (Y) View More
Samarium (Sm) Samarium (Sm) View More
Germanium (Ge) Germanium (Ge) View More
Gallium (Ga) Gallium (Ga) View More
Iridium (Ir) Iridium (Ir) View More
Ruthenium (Ru) Ruthenium (Ru) View More
Zirconium (Zr) Zirconium (Zr) View More
Gadolinium (Gd) Gadolinium (Gd) View More
Dysprosium (Dy) Dysprosium (Dy) View More
Erbium (Er) Erbium (Er) View More
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