Introduction to the Manufacturing Process of ZnSe Powder

Introduction to ZnSe Powder

In the wave of modern semiconductor technology development, ZnSe powder, as an excellent compound semiconductor, stands out like a brilliant pearl, attracting the attention of researchers and the industry. With its unique optical transparency, especially its excellent transmittance in the infrared spectrum, as well as suitable electrical properties, ZnSe powder has firmly established its position in key fields such as optoelectronic devices, infrared detectors, and laser window materials. To meet the rigorous demands of different application scenarios for ZnSe materials, a variety of manufacturing methods have emerged, each with its own strengths, complementing each other and together constructing the technological landscape for ZnSe material preparation.

Several Manufacturing Processes of ZnSe Powder

Physical Vapor Deposition (PVD)

Physical vapor deposition takes place in a high-vacuum environment. In the thermal evaporation PVD process, high-purity zinc and selenium sources are placed in high-temperature resistant crucibles, which are typically made of materials such as graphite or ceramics, known for their excellent high-temperature and chemical stability. The heating device begins to heat up, and when the temperature reaches the boiling points of zinc and selenium, the solid zinc and selenium gradually vaporize into gaseous atoms or molecules, escaping the crucible in the form of a vapor cloud. These gaseous particles move randomly in the vacuum chamber, and once they encounter a substrate at a relatively lower temperature, they quickly condense. The atoms arrange themselves according to lattice rules, stacking layer by layer, ultimately forming a ZnSe thin film on the substrate surface.

Advantages of Physical Vapor Deposition (PVD)

In terms of precision, PVD technology can accurately control the thickness of ZnSe thin films on the nanometer scale. Molecular beam epitaxy can even achieve single-atom layer thickness control, which is crucial for manufacturing ultrathin, high-performance optoelectronic devices. Because the entire film formation process occurs under high vacuum, it avoids contamination from external impurities, resulting in thin films with extremely high electrical purity, and excellent electrical performance such as carrier mobility. Moreover, PVD is well-suited for small-area, complex patterned substrates, making it ideal for the development of micro-nano optoelectronic devices, such as ZnSe thin film deposition on micro-lens arrays.

Chemical Vapor Deposition (CVD)

The stage for chemical vapor deposition is a high-temperature reaction chamber filled with reactive gases. Taking metal-organic chemical vapor deposition (MOCVD) as an example, organic metallic compounds of zinc, such as dimethylzinc ((CH₃)₂Zn), and selenium-containing gaseous precursors, like hydrogen selenide (H₂Se), are first delivered into the reaction chamber through high-precision gas flow controllers in a precise flow ratio. Carrier gases (typically high-purity argon or nitrogen) carry these precursors, and when heated to a specific temperature (generally between 600 and 1000°C), they are fully mixed in the reaction zone. Under high temperature and the influence of catalysts, the precursors undergo complex pyrolysis and chemical reactions, with zinc and selenium atoms bonding together. The resulting ZnSe molecules briefly exist in a gaseous state before quickly adsorbing onto the substrate surface. As the reaction continues, the molecules accumulate and crystallize, gradually growing into a continuous ZnSe thin film.

Advantages of Chemical Vapor Deposition (CVD)

CVD technology inherently offers advantages in large-area film formation, as it can cover hundreds of square centimeters or even larger substrates in one growth cycle. This makes it suitable for large-scale manufacturing of ZnSe substrates, aligning with the demands of industries such as flat-panel displays and large-area photovoltaics. By flexibly adjusting reaction parameters such as temperature, gas flow, and precursor concentration, it is possible to precisely control the crystal structure, doping concentration, and material properties of the ZnSe thin film. This allows for tailored material properties, and seamless integration with subsequent semiconductor fabrication processes, facilitating one-stop manufacturing of complex optoelectronic devices.