Aluminum nitride (AlN) is a solid nitride of aluminum. It has a high thermal conductivity of up to 285 W/(m-K) and is an electrical insulator. Its wafenite phase (w-AlN) has a bandgap of ~6 eV at room temperature, which has potential applications in optoelectronics at deep ultraviolet frequencies.
Purity: 99.9%
CAS: 24304-00-5
Due to the piezoelectric properties of AlN, epitaxial grown thin film crystalline aluminum nitride is used for surface acoustic wave sensors (SAW) deposited on silicon wafers. One application is a radio frequency filter widely used in mobile phones, which is called a thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminum nitride sandwiched between two metal layers.
Aluminum nitride is also used to construct piezoelectric micromechanical ultrasonic transducers, which emit and receive ultrasonic waves and can be used for aerial ranging up to one meter.
The metallization method can enable AlN to be used for electronic applications similar to alumina and beryllium oxide. AlN nanotubes, as inorganic quasi one-dimensional nanotubes with electrons such as carbon nanotubes, have been proposed as chemical sensors for toxic gases.
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