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Xi'an Zhiyue Material Tech. Co., Ltd.
Xi'an Zhiyue Material Tech. Co., Ltd.

Gallium Nitride Target (GaN)

Gallium Nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light emitting diodes since the 1990s. The compound, GaN sputtering target, is a very hard material with a zincite crystal structure. GaN target's wide bandgap of 3.4 eV provides exceptional properties for applications in optoelectronic, high power and high frequency devices.


Purity: 99.99%   

CAS: 25617-97-4

Size: Customer-made

  • gan target
  • gan target

Application of Gallium Nitride Target (GaN)

1

GaN sputtering target has a low sensitivity to ionizing radiation (like other Group III nitrides), making it a suitable material for satellite solar cell arrays. 

2

Military and space applications of GaN target may also benefit as equipment exhibits stability in radiation environments.

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