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Xi'an Zhiyue Material Tech. Co., Ltd.
Xi'an Zhiyue Material Tech. Co., Ltd.

Hafnium Oxide Powder (HfO2)

Hafnium oxide (HfO2), also referred to as hafnium, is a widely found and stable compound of hafnium. This inorganic compound appears as a colorless solid and acts as an electrical insulator, possessing a band gap between 5.3 and 5.7 eV. It serves as an intermediary substance in certain methods used to manufacture hafnium metal.


Purity: 99.95%-99.99%

SIZE: -1250mesh; Customer-made

CAS: 12055-23-1


  • hafnium dioxide
  • hafnium oxide
  • hafnium dioxide
  • hafnium oxide

Application of Hafnium Oxide (HfO2)

1

Hafnium dioxide, including its doped and oxygen-deficient variants, has garnered increased attention for its potential use in resistive switching memory devices, ferroelectric field-effect transistors (FeFET memories) compatible with CMOS technology, and memory chips.


2

In resistive switching memory devices, hafnium dioxide plays a pivotal role due to its ability to exhibit reversible changes in resistance when subjected to an electric field. This property enables the creation of non-volatile memory cells, which retain data even when power is turned off. Such resistive memory devices offer higher storage density, faster operation, and lower power consumption compared to traditional memory technologies, making them ideal for next-generation data storage solutions.

3

Furthermore, hafnium dioxide finds application in ferroelectric field-effect transistors (FeFET memories), particularly in the development of memory chips compatible with complementary metal-oxide-semiconductor (CMOS) technology. FeFET memories utilize ferroelectric materials like hafnium dioxide to store information in a non-destructive and low-power manner, enhancing the efficiency and performance of memory chips.


Characteristics of Hafnium Oxide Powder (HfO2)


Hafnium dioxide (HfO2) is an inorganic compound also known as hafnium, which is one of the most common and stable hafnium compounds. This colorless solid is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes for producing hafnium metal.



Uses of Hafnium Oxide Powder (HfO2)


Hafnium dioxide (as well as doped and oxygen-deficient hafnium dioxide) has attracted additional interest as a potential candidate material for resistive switching memories, CMOS-compatible ferroelectric field-effect transistors (FeFET memories), and memory chips.

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