Hafnium oxide is an inorganic compound with the molecular formula HfO2.This colorless solid, also known as hafnium, is one of the most common and stable hafnium compounds. It is an electrical insulator with a band gap of 5.3 to 5.7 eV. Hafnium dioxide is an intermediate in some processes for the production of hafnium metal.
Purity: 99.95%
CAS: 12055-23-1
Hafnium dioxide is used for optical coatings and as a high concentration material in DRAM capacitors and advanced metal oxide semiconductor devices κ Dielectric.
In recent years, hafnium oxide (as well as doped and anoxic hafnium oxide) has attracted additional interest as a potential candidate material for resistive switch memory and CMOS compatible ferroelectric field effect transistors (FeFET memory) and storage chips.
Due to its very high melting point, hafnium is also used as a refractory material in insulation materials for equipment such as thermocouples, and can operate at temperatures up to 2500 ° C.
Multilayer films of hafnium dioxide, silicon dioxide, and other materials have been developed for passive cooling of buildings.
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