Name: Tin Sulfide (II) Target (SnS)
Brand: Xi'an Zhiyue Material Tech. Co., Ltd.

Application of Tin Sulfide Target SnS

Tin sulfide (II) is a potential candidate material for the next generation of thin film solar cells. Currently, cadmium telluride and CIGS (copper indium gallium sulfide) are both used as p-type absorption layers, but they are formulated from toxic rare ingredients. In contrast, tin sulfide (II) is formed from inexpensive, Earth rich elements and is non-toxic. This material also has high light absorption coefficient, p-type conductivity, and a medium range direct bandgap of 1.3-1.4 eV, which are the electronic properties required for this type of absorption layer. Based on detailed balance calculations using material bandgap, the power conversion efficiency of solar cells using tin (II) sulfide absorption layers can reach up to 32%, which is equivalent to crystalline silicon. Finally, tin sulfide (II) is stable under both alkaline and acidic conditions. All the above characteristics indicate that tin sulfide (II) is an interesting material that can be used as an absorption layer for solar cells.

At present, the tin sulfide (II) thin film used for photovoltaic cells is still in the research and development stage, and the current power conversion efficiency is less than 5%. The obstacles to use include low open circuit voltage and the inability to achieve many of the aforementioned characteristics due to manufacturing challenges, but if these technical challenges are overcome, tin sulfide (II) remains a promising material.

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