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Xi'an Zhiyue Material Tech. Co., Ltd.
Xi'an Zhiyue Material Tech. Co., Ltd.

Titanium Disilicide Target (TiSi2)

Titanium Disilicide Target is a crucial material in semiconductor manufacturing, utilized for thin film deposition through physical vapor deposition techniques. Comprising titanium and silicon, it enhances electrical conductivity and thermal stability. This target is integral in the production of integrated circuits and electronic devices, providing a durable and efficient material for improving the performance of semiconductor components.


Titanium disilicide (TiSi2) is an inorganic compound.


Purity: 99.9%  

CAS: 12039-83-7

  • tisi2 sputtering target
  • tisi2 sputtering target

Application of Titanium Disilicide Target TiSi2

1

Titanium silicide is used in the semiconductor industry. It is usually grown on silicon and polycrystalline silicon wires through silicide technology to reduce the thin layer resistance of local transistor connections.

2

In the microelectronics industry, it is typically used for C54 phase.

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Related Silicide Sputtering Target

Chromium Silicide Target (CrSi2)
Chromium Silicide Target (CrSi2)
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