The Importance of Gan Sputtering Target in Semiconductor Technology

Semiconductor materials are a type of electronic material with semiconductor properties (conductivity between that of conductors and insulators, with resistivity in the range of 1mΩ·cm to 1GΩ·cm), which can be used to make semiconductor devices and integrated circuits.

The Importance of Gan Sputtering Targets in Semiconductor Technology

The development of semiconductor technology has had a profound impact on the progress of human society. Entering the 21st century, third-generation semiconductor materials like Gan Sputtering Targets have shown immense application potential in various fields due to their unique physical properties and advantages, gradually becoming a significant force in the semiconductor market. With the maturity of current 5G technology, Gan Sputtering Target materials have started to demonstrate unparalleled development potential. It is a wide bandgap material that can offer similar performance advantages to silicon carbide (SiC) but with greater possibilities for cost reduction.

Wider Bandgap

The bandgap of Gan Sputtering Targets is about 3.4 eV, much higher than that of silicon (Si) and gallium arsenide (GaAs), enabling it to operate at higher temperatures and voltages.

High Thermal Conductivity

Although the thermal conductivity of Gan Sputtering Targets is lower than that of SiC, it is still superior to Si and GaAs, which is beneficial for thermal management.

High Breakdown Electric Field

The breakdown electric field of Gan Sputtering Targets is more than 10 times that of Si, allowing it to withstand higher voltages.

Strong Radiation Resistance

Due to its lower sensitivity to ionizing radiation, Gan Sputtering Targets exhibit better stability in radiation environments.

Characteristics of Gan Sputtering Targets

High Performance

Mainly includes high output power, high power density, wide operating bandwidth, high efficiency, small size, light weight, etc. Currently, the first and second-generation semiconductor materials have reached their limits in terms of output power. However, Gan Sputtering Targets easily achieve high operational pulse width and duty cycle due to their thermal stability advantage, increasing the transmission power by 10 times at the antenna unit level.

High Reliability

The lifespan of power devices is closely related to their operating temperature; the higher the junction temperature, the lower the lifespan. Gan Sputtering Targets have characteristics such as a high junction temperature and high thermal conductivity, greatly enhancing the adaptability and reliability of devices under different temperatures.

Low Cost

The application of Gan Sputtering Targets can effectively improve the design of transmitting antennas, reduce the number of transmitting components, and decrease the number of amplifier stages, thereby effectively lowering costs.